Description
D5N50 N-CH SMD Mosfet
D5N50 N-CH SMD Mosfet Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary
High cell density, DMOS technology.
High density process has been designed to minimize on-state resistance.
Provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi.
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.
The advanced silicon technology provides smaller die sizes,
Which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced.
Voltage spikes and overshoot, to lower junction capacitance and reverse.
Recovery charge, to elimination of additional external components to keep systems up and running longer.
Specification
| Attribute | Value |
| Channel Type | N |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage | 50 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 100 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 48 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 6.22mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 25 nC @ 5 V, 40 nC @ 10 V |
| Height | 2.39mm |
| Maximum Operating Temperature | +175 °C |
| Length | 6.73mm |
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