Description
IRF7103PBF MOSFET SMD
IRF7103PBF MOSFET SMD is a dual N-channel MOSFET designed for vapour phase
Infrared or wave soldering techniques.
It has been modified through a customized lead-frame for enhanced
thermal characteristics and dual-die capability making it ideal in a
variety of power applications.
With these improvements, multiple devices can be used in an
application with dramatically reduced board space.
- Advanced process technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
RF7103 MOSFET. Datasheet
Type Designator: IRF7103
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 50 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 12 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 140 pF
Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm
Reviews
There are no reviews yet.