IRF640 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 150 W.
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
|Number of Channels||1 Channel|
|Drain-Source Breakdown Voltage (Vds)||200V|
|Continuous Drain Current (Id)||18A|
|Drain-Source Resistance (Rds On)||0.15Ohms|
|Gate-Source Voltage (Vgs)||20V|
|Gate Charge (Qg)||70 nC|
|Operating Temperature Range||-55 – 150°C|
|Power Dissipation (Pd)||150W|